Effect of bias addition on the gap-filling properties of fluorinated amorphous carbon thin films grown by helicon wave plasma-enhanced chemical vapor deposition

Gap-filling properties of fluorinated amorphous carbon thin films (a-C:F) for low-dielectric-constant interlayer dielectrics were investigated. The a-C:F films were grown by plasma-enhanced chemical vapor deposition from C₄F₈. It is demonstrated that by adding 400 kHz bias power to the substrate, the films could fill the gaps without leaving voids. Without bias application, the gap space was not filled. The bias power required to achieve complete gap filling was 30 W. The dielectric constant was 2.5 for the film with bias application.