TY - JOUR
T1 - Effect of bias treatment in the CVD diamond growth on Ir(001)
AU - Kono, S.
AU - Takano, T.
AU - Goto, T.
AU - Ikejima, Y.
AU - Shiraishi, M.
AU - Abukawa, T.
AU - Yamada, T.
AU - Sawabe, A.
N1 - Funding Information:
This work is partly supported by the Advanced Diamond Device Project administered by NEDO, Japan and by CREST of Japan Science and Technology Corporation. One (SK) of the authors is thankful to Prof. Brage Golding for fruitful discussion. The authors are thankful to Prof. Takeshi Hattori for the use of Raman spectrometer.
PY - 2004/11
Y1 - 2004/11
N2 - The effect of bias treatment (BT) on direct-current plasma CVD diamond growth has been studied in situ by X-ray photoelectron diffraction (XPD) together with LEED and XPS. It was found that C 1s XPD patterns from the sample after BT are similar to those of diamond (001). Coverage of carbon after BT is several tens of ML when BT is very successful. However, LEED shows no diamond (001) spots for the sample after BT. These apparently contradictory findings are explained by the sizes of the diamond (001) crystallites, which, after BT, are large enough to produce C Is XPD patterns of diamond, but too small to have coherent interference spots in LEED. It is concluded from this and other information that BT in a DC plasma creates hetero-epitaxial diamond crystallites a few nm or less. These diamond crystallites may be related to the atomically abrupt diamond/Ir interfaces of DC plasma CVD-grown samples revealed by TEM [A. Sawabe, H. Fukuda, T. Suzuki, Y. Ikuhara, T. Suzuki, Surf. Sci. 467 (2000) L845].
AB - The effect of bias treatment (BT) on direct-current plasma CVD diamond growth has been studied in situ by X-ray photoelectron diffraction (XPD) together with LEED and XPS. It was found that C 1s XPD patterns from the sample after BT are similar to those of diamond (001). Coverage of carbon after BT is several tens of ML when BT is very successful. However, LEED shows no diamond (001) spots for the sample after BT. These apparently contradictory findings are explained by the sizes of the diamond (001) crystallites, which, after BT, are large enough to produce C Is XPD patterns of diamond, but too small to have coherent interference spots in LEED. It is concluded from this and other information that BT in a DC plasma creates hetero-epitaxial diamond crystallites a few nm or less. These diamond crystallites may be related to the atomically abrupt diamond/Ir interfaces of DC plasma CVD-grown samples revealed by TEM [A. Sawabe, H. Fukuda, T. Suzuki, Y. Ikuhara, T. Suzuki, Surf. Sci. 467 (2000) L845].
KW - CVD hetero-epitaxial diamond (001)
KW - Diamond growth and characterisation
KW - Ir(001) substrate
KW - X-ray photoelectron diffraction
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U2 - 10.1016/j.diamond.2004.07.009
DO - 10.1016/j.diamond.2004.07.009
M3 - Conference article
AN - SCOPUS:7544220284
SN - 0925-9635
VL - 13
SP - 2081
EP - 2087
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 11-12
T2 - Proceedings of the 9th International Conference on New Diamond
Y2 - 26 March 2004 through 29 March 2004
ER -