Effect of bias treatment in the CVD diamond growth on Ir(001)

S. Kono, T. Takano, T. Goto, Y. Ikejima, M. Shiraishi, T. Abukawa, T. Yamada, A. Sawabe

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19 Citations (Scopus)


The effect of bias treatment (BT) on direct-current plasma CVD diamond growth has been studied in situ by X-ray photoelectron diffraction (XPD) together with LEED and XPS. It was found that C 1s XPD patterns from the sample after BT are similar to those of diamond (001). Coverage of carbon after BT is several tens of ML when BT is very successful. However, LEED shows no diamond (001) spots for the sample after BT. These apparently contradictory findings are explained by the sizes of the diamond (001) crystallites, which, after BT, are large enough to produce C Is XPD patterns of diamond, but too small to have coherent interference spots in LEED. It is concluded from this and other information that BT in a DC plasma creates hetero-epitaxial diamond crystallites a few nm or less. These diamond crystallites may be related to the atomically abrupt diamond/Ir interfaces of DC plasma CVD-grown samples revealed by TEM [A. Sawabe, H. Fukuda, T. Suzuki, Y. Ikuhara, T. Suzuki, Surf. Sci. 467 (2000) L845].

Original languageEnglish
Pages (from-to)2081-2087
Number of pages7
JournalDiamond and Related Materials
Issue number11-12
Publication statusPublished - 2004 Nov
EventProceedings of the 9th International Conference on New Diamond - Tokyo, Japan
Duration: 2004 Mar 262004 Mar 29


  • CVD hetero-epitaxial diamond (001)
  • Diamond growth and characterisation
  • Ir(001) substrate
  • X-ray photoelectron diffraction


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