Nitrogen-polar (N-polar) InGaN films were grown on a GaN template/c-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). The effects of c-plane sapphire substrate miscut angle on the indium (In) content and crystal properties of N-polar InGaN films were investigated. The In content increased with increasing miscut angle in the vicinal region of less than 1.1°. This tendency is different from that of group-III-polar InGaN growth because of the difference in the atomic arrangement on the terraces and at step edges between these two inverted polar surfaces. In the case of N-polar growth, a spontaneous two-dimensional nucleation on terraces is difficult and the intentional introduction of steps is effective compared with group-III-polar growth. Furthermore, by observing the surface morphologies of GaN templates in view of both macroscopic and microscopic scales, a clear relationship between the macroscopic surface structure of GaN template and the In content of InGaN was revealed.