Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Masaki Fujiu; Kazuya Takahashi; Masao Sakuraba; Junichi Murota

doi:10.1016/j.apsusc.2003.08.047

Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Masaki Fujiu, Kazuya Takahashi, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated4 during heat treatment between 500 and 700°C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500-700°C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(100) is stable up to 600°C.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.047
Publication status	Published - 2004 Mar 15

Keywords

Chemical vapor deposition
Ge(1 0 0)
Si atomic layer
SiH
SiH CH

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2003.08.047

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title = "Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)",

abstract = "Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated4 during heat treatment between 500 and 700°C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500-700°C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(100) is stable up to 600°C.",

keywords = "Chemical vapor deposition, Ge(1 0 0), Si atomic layer, SiH, SiH CH",

author = "Masaki Fujiu and Kazuya Takahashi and Masao Sakuraba and Junichi Murota",

note = "Funding Information: This study was supported by the Public Participation Program for the Promotion of Info. Communications Technology R&D from the Telecommunications Advancement Organization of Japan, and a Grant-in-Aid for Priority Area Research B (#11232201) and Grant-in-Aid for Scientific Research B (#12450001) from the Ministry of Education, Science, Sports and Culture of Japan.",

year = "2004",

month = mar,

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doi = "10.1016/j.apsusc.2003.08.047",

language = "English",

volume = "224",

pages = "206--209",

journal = "Applied Surface Science",

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T1 - Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

AU - Fujiu, Masaki

AU - Takahashi, Kazuya

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: This study was supported by the Public Participation Program for the Promotion of Info. Communications Technology R&D from the Telecommunications Advancement Organization of Japan, and a Grant-in-Aid for Priority Area Research B (#11232201) and Grant-in-Aid for Scientific Research B (#12450001) from the Ministry of Education, Science, Sports and Culture of Japan.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated4 during heat treatment between 500 and 700°C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500-700°C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(100) is stable up to 600°C.

AB - Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated4 during heat treatment between 500 and 700°C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500-700°C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(100) is stable up to 600°C.

KW - Chemical vapor deposition

KW - Ge(1 0 0)

KW - Si atomic layer

KW - SiH

KW - SiH CH

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DO - 10.1016/j.apsusc.2003.08.047

M3 - Article

AN - SCOPUS:1142292394

SN - 0169-4332

VL - 224

SP - 206

EP - 209

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Abstract

Keywords

ASJC Scopus subject areas

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