TY - JOUR
T1 - Effect of chemical preoxidation treatment on the structure of SiO 2 /Si interfaces
AU - Nohira, Hiroshi
AU - Sekikawa, Hiroaki
AU - Matsuda, Masanori
AU - Hattori, Takeo
N1 - Funding Information:
One of the authors( T.H.) expressehs is hearty thankst o Dr. MasatakeK atayamao f SEH Isobe R and D Centerf or supplyingth e silicon wafersu sed in the presenstt udy.P artof this work was supported by a 1994-1995G rand-in-Aidfo r GeneraSl cientific Researchfr om the Ministry of EducationS, cience and Cultureo f Japan.
PY - 1996/9
Y1 - 1996/9
N2 - The effects of chemical preoxidation treatments on the oxidation reaction at SiO 2 /Si(111) interfaces were investigated using XPS. In the case of preoxidation treatment in a mixed solution of H 2 SO 4 and H 2 O 2 the layer-by-layer oxidation reaction occurs at the interface as in the case of the preoxidation treatment in dry oxygen at 300°C. The effect of chemical preoxidation treatment in a hot solution of HNO 3 and that in a mixed solution of HCl and H 2 O 2 on the oxidation reaction at the interface were also investigated.
AB - The effects of chemical preoxidation treatments on the oxidation reaction at SiO 2 /Si(111) interfaces were investigated using XPS. In the case of preoxidation treatment in a mixed solution of H 2 SO 4 and H 2 O 2 the layer-by-layer oxidation reaction occurs at the interface as in the case of the preoxidation treatment in dry oxygen at 300°C. The effect of chemical preoxidation treatment in a hot solution of HNO 3 and that in a mixed solution of HCl and H 2 O 2 on the oxidation reaction at the interface were also investigated.
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U2 - 10.1016/S0169-4332(96)00171-7
DO - 10.1016/S0169-4332(96)00171-7
M3 - Article
AN - SCOPUS:0030233543
SN - 0169-4332
VL - 104-105
SP - 359
EP - 363
JO - Applied Surface Science
JF - Applied Surface Science
ER -