Effect of composition rate on erbium silicide work function on different silicon surface orientation

Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrical and physical properties of ErSix on n-type Si(100) (111) and (551) surfaces are reported. The ErSix density affects the work function of ErSix. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages343-350
Number of pages8
Edition1
DOIs
Publication statusPublished - 2013
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 17

Publication series

NameECS Transactions
Number1
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
Country/TerritoryCanada
CityToronto, ON
Period13/5/1213/5/17

Fingerprint

Dive into the research topics of 'Effect of composition rate on erbium silicide work function on different silicon surface orientation'. Together they form a unique fingerprint.

Cite this