Effect of Deep-Defects Excitation on Mechanical Energy Dissipation of Single-Crystal Diamond

Huanying Sun, Liwen Sang, Haihua Wu, Zilong Zhang, Tokuyuki Teraji, Tie Fu Li, J. Q. You, Masaya Toda, Satoshi Koizumi, Meiyong Liao

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The ultrawide band gap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are less active at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to explain well the energy dissipation at elevated temperatures. It is evident that the removal of boron impurities can substantially increase the quality factor of room-temperature diamond mechanical resonators. The deep energy nature of the defects bestows single-crystal diamond with outstanding low intrinsic energy dissipation in mechanical resonators at room temperature or above.

Original languageEnglish
Article number206802
JournalPhysical Review Letters
Issue number20
Publication statusPublished - 2020 Nov 12


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