Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire

Hironobu Tanigawa; Katsumi Suemitsu; Shunsuke Fukami; Norikazu Ohshima; Tetsuhiro Suzuki; Eiji Kariyada; Nobuyuki Ishiwata

doi:10.1143/APEX.4.013007

Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire

Hironobu Tanigawa, Katsumi Suemitsu, Shunsuke Fukami, Norikazu Ohshima, Tetsuhiro Suzuki, Eiji Kariyada, Nobuyuki Ishiwata

RIEC - Computing System Platforms Division

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20 Citations (Scopus)

Abstract

This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.

Original language	English
Article number	013007
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.013007
Publication status	Published - 2011 Jan

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abstract = "This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.",

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AU - Suzuki, Tetsuhiro

AU - Kariyada, Eiji

AU - Ishiwata, Nobuyuki

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AB - This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.

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Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire

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