Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon

Shigefusa Chichibu; Tsuyoshi Harada; Satoru Matsumoto

doi:10.1143/JJAP.27.L1543

Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon

Shigefusa Chichibu, Tsuyoshi Harada, Satoru Matsumoto

IMRAM - Division of Measurements

Keio University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.

Original language	English
Pages (from-to)	L1543-L1547
Journal	Japanese Journal of Applied Physics
Volume	27
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.27.L1543
Publication status	Published - 1988 Aug

Keywords

CZ silicon
Doping effect
Oxidation-induced stacking faults

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10.1143/JJAP.27.L1543

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title = "Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon",

abstract = "The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.",

keywords = "CZ silicon, Doping effect, Oxidation-induced stacking faults",

author = "Shigefusa Chichibu and Tsuyoshi Harada and Satoru Matsumoto",

year = "1988",

month = aug,

doi = "10.1143/JJAP.27.L1543",

language = "English",

volume = "27",

pages = "L1543--L1547",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

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TY - JOUR

T1 - Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon

AU - Chichibu, Shigefusa

AU - Harada, Tsuyoshi

AU - Matsumoto, Satoru

PY - 1988/8

Y1 - 1988/8

N2 - The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.

AB - The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.

KW - CZ silicon

KW - Doping effect

KW - Oxidation-induced stacking faults

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U2 - 10.1143/JJAP.27.L1543

DO - 10.1143/JJAP.27.L1543

M3 - Article

AN - SCOPUS:0024054592

SN - 0021-4922

VL - 27

SP - L1543-L1547

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8 A

ER -

Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon

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Keywords

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