Effect of doping and counterdoping on high-pressure phase transitions of silicon

J. J. Guo; D. Pan; X. Q. Yan; T. Fujita; M. W. Chen

doi:10.1063/1.3457479

Effect of doping and counterdoping on high-pressure phase transitions of silicon

J. J. Guo, D. Pan, X. Q. Yan, T. Fujita, M. W. Chen

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.

Original language	English
Article number	251910
Journal	Applied Physics Letters
Volume	96
Issue number	25
DOIs	https://doi.org/10.1063/1.3457479
Publication status	Published - 2010 Jun 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3457479

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@article{94a5a5d22e064d00b875d676c3dd16a6,

title = "Effect of doping and counterdoping on high-pressure phase transitions of silicon",

abstract = "The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.",

author = "Guo, {J. J.} and D. Pan and Yan, {X. Q.} and T. Fujita and Chen, {M. W.}",

year = "2010",

month = jun,

day = "21",

doi = "10.1063/1.3457479",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Effect of doping and counterdoping on high-pressure phase transitions of silicon

AU - Guo, J. J.

AU - Pan, D.

AU - Yan, X. Q.

AU - Fujita, T.

AU - Chen, M. W.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.

AB - The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.

UR - http://www.scopus.com/inward/record.url?scp=77954080751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954080751&partnerID=8YFLogxK

U2 - 10.1063/1.3457479

DO - 10.1063/1.3457479

M3 - Article

AN - SCOPUS:77954080751

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251910

ER -

Effect of doping and counterdoping on high-pressure phase transitions of silicon

Abstract

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