TY - GEN
T1 - Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes
AU - Akimoto, R.
AU - Kuroda, R.
AU - Teramoto, A.
AU - Mawaki, T.
AU - Ichino, S.
AU - Suwa, T.
AU - Sugawa, S.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS. The trap location along the source-drain direction is estimated by the VDS dependencies of RTN characteristics.
AB - In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS. The trap location along the source-drain direction is estimated by the VDS dependencies of RTN characteristics.
KW - Array Test Circuit
KW - Drain-to-Source Voltage
KW - Random Telegraph Noise (RTN)
KW - Trapezoidal Gate Transistor
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U2 - 10.1109/IRPS45951.2020.9128341
DO - 10.1109/IRPS45951.2020.9128341
M3 - Conference contribution
AN - SCOPUS:85088402429
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -