Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

Y. M. Lee; J. Hayakawa; S. Ikeda; F. Matsukura; H. Ohno

doi:10.1063/1.2742576

Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno

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296 Citations (Scopus)

Abstract

The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (Cox Fe100-x) 80 B20 MgO (Cox Fe100-x) 80 B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm -thick (Co25 Fe75) 80 B20 electrodes with a 2.1-nm -thick MgO barrier annealed at 475 °C.

Original language	English
Article number	212507
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2742576
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier",

abstract = "The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (Cox Fe100-x) 80 B20 MgO (Cox Fe100-x) 80 B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm -thick (Co25 Fe75) 80 B20 electrodes with a 2.1-nm -thick MgO barrier annealed at 475 °C.",

author = "Lee, {Y. M.} and J. Hayakawa and S. Ikeda and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported by the IT program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

AU - Lee, Y. M.

AU - Hayakawa, J.

AU - Ikeda, S.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported by the IT program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2007

Y1 - 2007

N2 - The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (Cox Fe100-x) 80 B20 MgO (Cox Fe100-x) 80 B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm -thick (Co25 Fe75) 80 B20 electrodes with a 2.1-nm -thick MgO barrier annealed at 475 °C.

AB - The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (Cox Fe100-x) 80 B20 MgO (Cox Fe100-x) 80 B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm -thick (Co25 Fe75) 80 B20 electrodes with a 2.1-nm -thick MgO barrier annealed at 475 °C.

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Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

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