Abstract
Effect of electron beam irradiation (15 kV) on Si surface cleaning prior to epitaxial growth in an ultrahigh- vacuum system was investigated. A CaF2 film was epitaxially grown on the Si surface, and the interface was observed by high-voltage electron microscopy. Amorphous layers, which were observed in the interface prepared with conventional thermal treatment at 750° C, became much smaller with electron beam irradiation after the thermal treatment. Based on the electron microscope observation, the effect of electron beam irradiation on Si surface cleaning was briefly discussed.
| Original language | English |
|---|---|
| Pages (from-to) | L573-L576 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 34 |
| Issue number | 5A |
| DOIs | |
| Publication status | Published - 1995 May |
Keywords
- Calcium fluoride
- Electron beam irradiation
- Epitaxial growth
- High-voltage electron microscopy
- Native oxide
- Silicon
- Surface cleaning