TY - JOUR
T1 - Effect of electron localization on the edge-state spins in a disordered network of nanographene sheets
AU - Joly, V. L.Joseph
AU - Takahara, Katsunori
AU - Takai, Kazuyuki
AU - Sugihara, Ko
AU - Enoki, Toshiaki
AU - Koshino, Mikito
AU - Tanaka, Hidekazu
PY - 2010/3/5
Y1 - 2010/3/5
N2 - The magnetism and its dynamical behavior is investigated in relation to electron-localization effect for the edge-state spins of three-dimensional randomly networked nanographene sheets which interact weakly with each other. The electron transport is governed by Coulomb-gap variable-range hopping between nanographene sheets. At high temperatures, the electron spin resonance (ESR) signal with a feature of homogeneous spin system reveals the bottleneck effect in the spin relaxation to the lattice for a strongly coupled system of edge-state spins and conduction π electrons, in a given nanographene sheet. Below 20K, a discontinuous ESR line broadening accompanied by hole-burning proves the formation of an inhomogeneous spin state, indicating a static spatial distribution of on-resonance fields. This inhomogeneity originates from a distribution of the strengths of the ferrimagnetic moments on the individual nanographene sheets, taking into account that the constituent nanographene sheets with their shapes randomly varying have different strengths of ferrimagnetic moments. Strong electron localization below 20K in the internanographene electron hopping is responsible for the crossover from the homogeneous spin state to the inhomogeneous one, in the latter of which ferrimagnetic short-range ordering is evident in the edge-state spin system.
AB - The magnetism and its dynamical behavior is investigated in relation to electron-localization effect for the edge-state spins of three-dimensional randomly networked nanographene sheets which interact weakly with each other. The electron transport is governed by Coulomb-gap variable-range hopping between nanographene sheets. At high temperatures, the electron spin resonance (ESR) signal with a feature of homogeneous spin system reveals the bottleneck effect in the spin relaxation to the lattice for a strongly coupled system of edge-state spins and conduction π electrons, in a given nanographene sheet. Below 20K, a discontinuous ESR line broadening accompanied by hole-burning proves the formation of an inhomogeneous spin state, indicating a static spatial distribution of on-resonance fields. This inhomogeneity originates from a distribution of the strengths of the ferrimagnetic moments on the individual nanographene sheets, taking into account that the constituent nanographene sheets with their shapes randomly varying have different strengths of ferrimagnetic moments. Strong electron localization below 20K in the internanographene electron hopping is responsible for the crossover from the homogeneous spin state to the inhomogeneous one, in the latter of which ferrimagnetic short-range ordering is evident in the edge-state spin system.
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U2 - 10.1103/PhysRevB.81.115408
DO - 10.1103/PhysRevB.81.115408
M3 - Article
AN - SCOPUS:77955082023
SN - 0163-1829
VL - 81
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 11
M1 - 115408
ER -