Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

K. Shiojima; T. Makimura; T. Maruyama; T. Suemitsu; N. Shigekawa; M. Hiroki; H. Yokoyama

doi:10.1002/pssc.200565130

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (g_m). The intrinsic g_m after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.

Original language	English
Pages (from-to)	2360-2363
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565130
Publication status	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs",

abstract = "The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.",

author = "K. Shiojima and T. Makimura and T. Maruyama and T. Suemitsu and N. Shigekawa and M. Hiroki and H. Yokoyama",

year = "2006",

doi = "10.1002/pssc.200565130",

language = "English",

volume = "3",

pages = "2360--2363",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

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TY - JOUR

T1 - Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

AU - Shiojima, K.

AU - Makimura, T.

AU - Maruyama, T.

AU - Suemitsu, T.

AU - Shigekawa, N.

AU - Hiroki, M.

AU - Yokoyama, H.

PY - 2006

Y1 - 2006

N2 - The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.

AB - The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.

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U2 - 10.1002/pssc.200565130

DO - 10.1002/pssc.200565130

M3 - Conference article

AN - SCOPUS:33746349533

SN - 1862-6351

VL - 3

SP - 2360

EP - 2363

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

Abstract

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