TY - JOUR
T1 - Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
AU - Shiojima, K.
AU - Makimura, T.
AU - Maruyama, T.
AU - Suemitsu, T.
AU - Shigekawa, N.
AU - Hiroki, M.
AU - Yokoyama, H.
PY - 2006
Y1 - 2006
N2 - The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.
AB - The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.
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U2 - 10.1002/pssc.200565130
DO - 10.1002/pssc.200565130
M3 - Conference article
AN - SCOPUS:33746349533
SN - 1862-6351
VL - 3
SP - 2360
EP - 2363
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
T2 - 6th International Conference on Nitride Semiconductors, ICNS-6
Y2 - 28 August 2005 through 2 September 2005
ER -