TY - GEN
T1 - Effect of erbium silicide crystallinity for low barrier contact between erbium silicide and n-type silicon
AU - Tanaka, Hiroaki
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2013
Y1 - 2013
N2 - The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work function of ErSix. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.
AB - The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work function of ErSix. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.
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UR - http://www.scopus.com/inward/citedby.url?scp=84885732023&partnerID=8YFLogxK
U2 - 10.1149/05004.0343ecst
DO - 10.1149/05004.0343ecst
M3 - Conference contribution
AN - SCOPUS:84885732023
SN - 9781607683520
T3 - ECS Transactions
SP - 343
EP - 348
BT - Dielectric Materials and Metals for Nanoelectronics and Photonics 10
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -