TY - JOUR
T1 - Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy
AU - Ishii, H.
AU - Ohno, H.
AU - Matsuzaki, K.
AU - Hasegawa, H.
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Specially Promoted Research (*600 65002) from the Ministry of Education Science and Culture.
PY - 1989/2/2
Y1 - 1989/2/2
N2 - Clean surfaces of GaAs and InAs prepared by molecular beam epitaxy have been epitaxy have been exposed to trimethylgallium and diethylgalliumchloride at various temperatures and the resultant change has been observed in situ by X-ray photoelectron spectroscopy. Saturation of amount of Ga deposited onto the surface to about 1 monolayer has been observed at substrate temperature above 320°C, which results in atomic layer epitaxy. No appreciable increase of carbon nor chlorine has been observed after exposure to group III alkyls.
AB - Clean surfaces of GaAs and InAs prepared by molecular beam epitaxy have been epitaxy have been exposed to trimethylgallium and diethylgalliumchloride at various temperatures and the resultant change has been observed in situ by X-ray photoelectron spectroscopy. Saturation of amount of Ga deposited onto the surface to about 1 monolayer has been observed at substrate temperature above 320°C, which results in atomic layer epitaxy. No appreciable increase of carbon nor chlorine has been observed after exposure to group III alkyls.
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U2 - 10.1016/0022-0248(89)90365-5
DO - 10.1016/0022-0248(89)90365-5
M3 - Article
AN - SCOPUS:0024606078
SN - 0022-0248
VL - 95
SP - 132
EP - 135
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -