Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

Supawan Joonwichien; Isao Takahashi; Kentaro Kutsukake; Noritaka Usami

doi:10.1002/pip.2795

Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

Supawan Joonwichien, Isao Takahashi, Kentaro Kutsukake, Noritaka Usami

Materials Design Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial Σ5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency.

Original language	English
Pages (from-to)	1615-1625
Number of pages	11
Journal	Progress in Photovoltaics: Research and Applications
Volume	24
Issue number	12
DOIs	https://doi.org/10.1002/pip.2795
Publication status	Published - 2016 Dec 1

Keywords

artificial grain boundary
internal gettering
multicrystalline Si
phosphorus diffusion gettering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pip.2795

Cite this

@article{f7c4b70f70444422a6b92316a5a89588,

title = "Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities",

abstract = "We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial Σ5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency.",

keywords = "artificial grain boundary, internal gettering, multicrystalline Si, phosphorus diffusion gettering",

author = "Supawan Joonwichien and Isao Takahashi and Kentaro Kutsukake and Noritaka Usami",

year = "2016",

month = dec,

day = "1",

doi = "10.1002/pip.2795",

language = "English",

volume = "24",

pages = "1615--1625",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "John Wiley and Sons Ltd",

number = "12",

}

TY - JOUR

T1 - Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

AU - Joonwichien, Supawan

AU - Takahashi, Isao

AU - Kutsukake, Kentaro

AU - Usami, Noritaka

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial Σ5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency.

AB - We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial Σ5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency.

KW - artificial grain boundary

KW - internal gettering

KW - multicrystalline Si

KW - phosphorus diffusion gettering

UR - http://www.scopus.com/inward/record.url?scp=84995677654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84995677654&partnerID=8YFLogxK

U2 - 10.1002/pip.2795

DO - 10.1002/pip.2795

M3 - Article

AN - SCOPUS:84995677654

SN - 1062-7995

VL - 24

SP - 1615

EP - 1625

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 12

ER -

Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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