Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

J. Hayakawa; S. Ikeda; Y. M. Lee; F. Matsukura; H. Ohno

doi:10.1063/1.2402904

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

201 Citations (Scopus)

Abstract

The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeBMgOCoFeB magnetic tunnel junctions (MTJs) annealed at 450 °C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 °C. Energy dispersive x-ray analysis shows that annealing at 450 °C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.

Original language	English
Article number	232510
Journal	Applied Physics Letters
Volume	89
Issue number	23
DOIs	https://doi.org/10.1063/1.2402904
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2402904

Cite this

@article{e91d0bc72760494e8ae3ab0ec86c027b,

title = "Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions",

abstract = "The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeBMgOCoFeB magnetic tunnel junctions (MTJs) annealed at 450 °C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 °C. Energy dispersive x-ray analysis shows that annealing at 450 °C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.",

author = "J. Hayakawa and S. Ikeda and Lee, {Y. M.} and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported by the IT program of the Research Revolution 2002 (RR2002) from MEXT.",

year = "2006",

doi = "10.1063/1.2402904",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

AU - Hayakawa, J.

AU - Ikeda, S.

AU - Lee, Y. M.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported by the IT program of the Research Revolution 2002 (RR2002) from MEXT.

PY - 2006

Y1 - 2006

N2 - The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeBMgOCoFeB magnetic tunnel junctions (MTJs) annealed at 450 °C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 °C. Energy dispersive x-ray analysis shows that annealing at 450 °C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.

AB - The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin-valve (PSV) CoFeBMgOCoFeB magnetic tunnel junctions (MTJs) annealed at 450 °C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450 °C. Energy dispersive x-ray analysis shows that annealing at 450 °C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33845452965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845452965&partnerID=8YFLogxK

U2 - 10.1063/1.2402904

DO - 10.1063/1.2402904

M3 - Article

AN - SCOPUS:33845452965

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232510

ER -

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this