Effect of high-magnetic-field on dislocation-oxygen impurity interaction in Si

I. Yonenaga, K. Takahashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


This paper reports effects of magnetic-treatments on an interaction between dislocations and oxygen impurity in Si. Though oxygen impurity in Si has a strong effect of immobilizing dislocations due to preferential segregation and formation of precipitates along dislocations at elevated temperatures, the capability of immobilization of the oxide precipitates against dislocations decreases under an application of magnetic field higher than 5 T and loses almost completely at 10T. These results suggest a spin-dependent solid-state reaction in oxygen impurity-dislocation interaction in Si.

Original languageEnglish
Article number094
Pages (from-to)407-410
Number of pages4
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2006 Dec 1


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