Abstract
This paper reports effects of magnetic-treatments on an interaction between dislocations and oxygen impurity in Si. Though oxygen impurity in Si has a strong effect of immobilizing dislocations due to preferential segregation and formation of precipitates along dislocations at elevated temperatures, the capability of immobilization of the oxide precipitates against dislocations decreases under an application of magnetic field higher than 5 T and loses almost completely at 10T. These results suggest a spin-dependent solid-state reaction in oxygen impurity-dislocation interaction in Si.
| Original language | English |
|---|---|
| Article number | 094 |
| Pages (from-to) | 407-410 |
| Number of pages | 4 |
| Journal | Journal of Physics: Conference Series |
| Volume | 51 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |