TY - GEN
T1 - Effect of hole-injection layer on top-gate organic field-effect transistors based on soluble benzothienobenzothiophene derivatives
AU - Mochizuki, Fumio
AU - Miyata, Yosuke
AU - Nagase, Takashi
AU - Kobayashi, Takashi
AU - Takimiya, Kazuo
AU - Ikeda, Masaaki
AU - Naito, Hiroyoshi
PY - 2012
Y1 - 2012
N2 - Effect of MoO3 hole-injection layers on the electrical characteristics of top-gate Ce-BTBT OFETs has been investigated. The field-effect mobility of short-channel devices is improved by inserting 1-nm-thick M0O3 layers, as a result of the decrease in contact resistance. The dependence of the electrical characteristics on M0O3 thickness is also investigated.
AB - Effect of MoO3 hole-injection layers on the electrical characteristics of top-gate Ce-BTBT OFETs has been investigated. The field-effect mobility of short-channel devices is improved by inserting 1-nm-thick M0O3 layers, as a result of the decrease in contact resistance. The dependence of the electrical characteristics on M0O3 thickness is also investigated.
KW - C-BTBT
KW - MoO
KW - Organic field-effect transistors
KW - Short-channel effect
UR - http://www.scopus.com/inward/record.url?scp=84885897486&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885897486&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84885897486
SN - 9781627486521
T3 - Proceedings of the International Display Workshops
SP - 1022
EP - 1025
BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Y2 - 4 December 2012 through 7 December 2012
ER -
