Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

Keiji Hosotani; Yoshiaki Asao; Makoto Nagamine; Tomomasa Ueda; Hisanori Aikawa; Naoharu Shimomura; Sumio Ikegawa; Takeshi Kajiyama; Shigeki Takahashi; Akihiro Nitayama; Hiroaki Yoda

doi:10.1109/RELPHY.2007.369995

Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

Keiji Hosotani, Yoshiaki Asao, Makoto Nagamine, Tomomasa Ueda, Hisanori Aikawa, Naoharu Shimomura, Sumio Ikegawa, Takeshi Kajiyama, Shigeki Takahashi, Akihiro Nitayama, Hiroaki Yoda

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

Original language	English
Title of host publication	2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages	650-651
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2007.369995
Publication status	Published - 2007 Sept 25
Event	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States Duration: 2007 Apr 15 → 2007 Apr 19

Publication series

Name	Annual Proceedings - Reliability Physics (Symposium)
ISSN (Print)	0099-9512

Other

Other	45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Country/Territory	United States
City	Phoenix, AZ
Period	07/4/15 → 07/4/19

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/RELPHY.2007.369995

Cite this

Hosotani, K., Asao, Y., Nagamine, M., Ueda, T., Aikawa, H., Shimomura, N., Ikegawa, S., Kajiyama, T., Takahashi, S., Nitayama, A., & Yoda, H. (2007). Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM. In 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual (pp. 650-651). [4227736] (Annual Proceedings - Reliability Physics (Symposium)). https://doi.org/10.1109/RELPHY.2007.369995

Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM. / Hosotani, Keiji; Asao, Yoshiaki; Nagamine, Makoto et al.
2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual. 2007. p. 650-651 4227736 (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosotani, K, Asao, Y, Nagamine, M, Ueda, T, Aikawa, H, Shimomura, N, Ikegawa, S, Kajiyama, T, Takahashi, S, Nitayama, A & Yoda, H 2007, Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM. in 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual., 4227736, Annual Proceedings - Reliability Physics (Symposium), pp. 650-651, 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS, Phoenix, AZ, United States, 07/4/15. https://doi.org/10.1109/RELPHY.2007.369995

Hosotani K, Asao Y, Nagamine M, Ueda T, Aikawa H, Shimomura N et al. Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM. In 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual. 2007. p. 650-651. 4227736. (Annual Proceedings - Reliability Physics (Symposium)). doi: 10.1109/RELPHY.2007.369995

@inproceedings{5bf9e6c473dd46b4b7edc233a0496461,

title = "Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM",

abstract = "Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.",

author = "Keiji Hosotani and Yoshiaki Asao and Makoto Nagamine and Tomomasa Ueda and Hisanori Aikawa and Naoharu Shimomura and Sumio Ikegawa and Takeshi Kajiyama and Shigeki Takahashi and Akihiro Nitayama and Hiroaki Yoda",

year = "2007",

month = sep,

day = "25",

doi = "10.1109/RELPHY.2007.369995",

language = "English",

isbn = "1424409195",

series = "Annual Proceedings - Reliability Physics (Symposium)",

pages = "650--651",

booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",

note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",

}

TY - GEN

T1 - Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

AU - Hosotani, Keiji

AU - Asao, Yoshiaki

AU - Nagamine, Makoto

AU - Ueda, Tomomasa

AU - Aikawa, Hisanori

AU - Shimomura, Naoharu

AU - Ikegawa, Sumio

AU - Kajiyama, Takeshi

AU - Takahashi, Shigeki

AU - Nitayama, Akihiro

AU - Yoda, Hiroaki

PY - 2007/9/25

Y1 - 2007/9/25

N2 - Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

AB - Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

UR - http://www.scopus.com/inward/record.url?scp=34548709097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548709097&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2007.369995

DO - 10.1109/RELPHY.2007.369995

M3 - Conference contribution

AN - SCOPUS:34548709097

SN - 1424409195

SN - 9781424409198

T3 - Annual Proceedings - Reliability Physics (Symposium)

SP - 650

EP - 651

BT - 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual

T2 - 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS

Y2 - 15 April 2007 through 19 April 2007

ER -

Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this