Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study

Ken Suzuki; Tatsuya Inoue; Hideo Miura

doi:10.1109/SISPAD.2008.4648311

Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study

Ken Suzuki, Tatsuya Inoue, Hideo Miura

ENG - Fracture and Reliability Research Institute

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO₂ was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after the post-oxidation anneal. For HfO₂, they produce acceptor states in band gap and thus, give rise to the shrinkage of the local band gap of the oxide. In addition, such excess oxygen interstitials have been found to form a tungsten oxide layer at W/HfO₂ interface during the deposition process of a tungsten gate. It is very important, therefore, to minimize the concentration of point defects in the film to assure the reliability of the MOS structures.

Original language	English
Pages	357-360
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2008.4648311
Publication status	Published - 2008 Dec 1
Event	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan Duration: 2008 Sept 9 → 2008 Sept 11

Other

Other	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
Country/Territory	Japan
City	Hakone
Period	08/9/9 → 08/9/11

Keywords

Band gap
Carbon interstitial
HfO
Oxygen vacancy
Point defect
Quantum molecular dynamics
Reliability

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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10.1109/SISPAD.2008.4648311

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Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study. / Suzuki, Ken; Inoue, Tatsuya; Miura, Hideo.
2008. 357-360 Paper presented at 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, Hakone, Japan.

Research output: Contribution to conference › Paper › peer-review

@conference{3b022cbd662740adbafb6c568f63138a,

title = "Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study",

abstract = "The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO2 was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after the post-oxidation anneal. For HfO2, they produce acceptor states in band gap and thus, give rise to the shrinkage of the local band gap of the oxide. In addition, such excess oxygen interstitials have been found to form a tungsten oxide layer at W/HfO2 interface during the deposition process of a tungsten gate. It is very important, therefore, to minimize the concentration of point defects in the film to assure the reliability of the MOS structures.",

keywords = "Band gap, Carbon interstitial, HfO, Oxygen vacancy, Point defect, Quantum molecular dynamics, Reliability",

author = "Ken Suzuki and Tatsuya Inoue and Hideo Miura",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/SISPAD.2008.4648311",

language = "English",

pages = "357--360",

note = "2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 ; Conference date: 09-09-2008 Through 11-09-2008",

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TY - CONF

T1 - Effect of interface characteristics of W/HfO2±x on electronic reliability

T2 - 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008

AU - Suzuki, Ken

AU - Inoue, Tatsuya

AU - Miura, Hideo

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO2 was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after the post-oxidation anneal. For HfO2, they produce acceptor states in band gap and thus, give rise to the shrinkage of the local band gap of the oxide. In addition, such excess oxygen interstitials have been found to form a tungsten oxide layer at W/HfO2 interface during the deposition process of a tungsten gate. It is very important, therefore, to minimize the concentration of point defects in the film to assure the reliability of the MOS structures.

AB - The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO2 was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after the post-oxidation anneal. For HfO2, they produce acceptor states in band gap and thus, give rise to the shrinkage of the local band gap of the oxide. In addition, such excess oxygen interstitials have been found to form a tungsten oxide layer at W/HfO2 interface during the deposition process of a tungsten gate. It is very important, therefore, to minimize the concentration of point defects in the film to assure the reliability of the MOS structures.

KW - Band gap

KW - Carbon interstitial

KW - HfO

KW - Oxygen vacancy

KW - Point defect

KW - Quantum molecular dynamics

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=67650348272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650348272&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2008.4648311

DO - 10.1109/SISPAD.2008.4648311

M3 - Paper

AN - SCOPUS:67650348272

SP - 357

EP - 360

Y2 - 9 September 2008 through 11 September 2008

ER -

Effect of interface characteristics of W/HfO2±x on electronic reliability: Quantum chemical molecular dynamics study

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Keywords

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