Effect of ir content and sputtering conditions on unidirectional anisotropy of ni-fe/mn-ir films fabricated under the extremely clean sputtering process

Kojiro Yagami; Masakiyo Tsunoda; Satoshi Sugano; Migaku Takahashi

doi:10.1109/20.800708

Effect of ir content and sputtering conditions on unidirectional anisotropy of ni-fe/mn-ir films fabricated under the extremely clean sputtering process

Kojiro Yagami, Masakiyo Tsunoda, Satoshi Sugano, Migaku Takahashi

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fabricated under the extremely clean sputtering process. We found that the unidirectional anisotropy constant 7K monotonously increased with increasing the Ir content and decreasing the deposition rote of Mn-Ir films. The change of JK against the deposition rate of Mn-Ir films is possibly caused by the quite slight changes of the mlcrostrocture of Mn-Ir films, which were undetectable with XRD.

Original language	English
Pages (from-to)	3919-3921
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.800708
Publication status	Published - 1999
Externally published	Yes

Keywords

Exchange anlsotropy
Extremely clean sputtering
Ir content
Mn-ir
Sputtering conditions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.800708

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title = "Effect of ir content and sputtering conditions on unidirectional anisotropy of ni-fe/mn-ir films fabricated under the extremely clean sputtering process",

abstract = "An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fabricated under the extremely clean sputtering process. We found that the unidirectional anisotropy constant 7K monotonously increased with increasing the Ir content and decreasing the deposition rote of Mn-Ir films. The change of JK against the deposition rate of Mn-Ir films is possibly caused by the quite slight changes of the mlcrostrocture of Mn-Ir films, which were undetectable with XRD.",

keywords = "Exchange anlsotropy, Extremely clean sputtering, Ir content, Mn-ir, Sputtering conditions",

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T1 - Effect of ir content and sputtering conditions on unidirectional anisotropy of ni-fe/mn-ir films fabricated under the extremely clean sputtering process

AU - Yagami, Kojiro

AU - Tsunoda, Masakiyo

AU - Sugano, Satoshi

AU - Takahashi, Migaku

PY - 1999

Y1 - 1999

N2 - An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fabricated under the extremely clean sputtering process. We found that the unidirectional anisotropy constant 7K monotonously increased with increasing the Ir content and decreasing the deposition rote of Mn-Ir films. The change of JK against the deposition rate of Mn-Ir films is possibly caused by the quite slight changes of the mlcrostrocture of Mn-Ir films, which were undetectable with XRD.

AB - An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fabricated under the extremely clean sputtering process. We found that the unidirectional anisotropy constant 7K monotonously increased with increasing the Ir content and decreasing the deposition rote of Mn-Ir films. The change of JK against the deposition rate of Mn-Ir films is possibly caused by the quite slight changes of the mlcrostrocture of Mn-Ir films, which were undetectable with XRD.

KW - Exchange anlsotropy

KW - Extremely clean sputtering

KW - Ir content

KW - Mn-ir

KW - Sputtering conditions

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ER -

Effect of ir content and sputtering conditions on unidirectional anisotropy of ni-fe/mn-ir films fabricated under the extremely clean sputtering process

Abstract

Keywords

ASJC Scopus subject areas

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