Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

D. Chiba; K. Takamura; F. Matsukura; H. Ohno

doi:10.1063/1.1571666

Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

D. Chiba, K. Takamura, F. Matsukura, H. Ohno

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Tohoku University

Research output: Contribution to journal › Article › peer-review

227 Citations (Scopus)

Abstract

The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of T_C suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.

Original language	English
Pages (from-to)	3020-3022
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	18
DOIs	https://doi.org/10.1063/1.1571666
Publication status	Published - 2003 May 5

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abstract = "The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.",

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AU - Matsukura, F.

AU - Ohno, H.

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Y1 - 2003/5/5

N2 - The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.

AB - The effect of low-temperature annealing on (Ga,Mn)As trilayer structures was investigated. The annealing was done at 250-280 °C in air and the temperature dependence of the magnetic moment was measured as a function of annealing time. The annealing time and thickness dependence of TC suggested that diffusion process from the surface is involved in the modification of the properties of the film by annealing.

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Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

Abstract

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