Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

Lu Chung Chuang; Kensaku Maeda; Haruhiko Morito; Keiji Shiga; Wolfram Miller; Kozo Fujiwara

doi:10.1016/j.mtla.2019.100357

Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Wolfram Miller, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.

Original language	English
Article number	100357
Journal	Materialia
Volume	7
DOIs	https://doi.org/10.1016/j.mtla.2019.100357
Publication status	Published - 2019 Sept

Keywords

Directional solidification
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.mtla.2019.100357

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@article{84284afa6e0c4e19a98da459772b370a,

title = "Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon",

abstract = "Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.",

keywords = "Directional solidification, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Kensaku Maeda and Haruhiko Morito and Keiji Shiga and Wolfram Miller and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2019 Acta Materialia Inc.",

year = "2019",

month = sep,

doi = "10.1016/j.mtla.2019.100357",

language = "English",

volume = "7",

journal = "Materialia",

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T1 - Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

AU - Chuang, Lu Chung

AU - Maeda, Kensaku

AU - Morito, Haruhiko

AU - Shiga, Keiji

AU - Miller, Wolfram

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2019 Acta Materialia Inc.

PY - 2019/9

Y1 - 2019/9

N2 - Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.

AB - Interactions between Σ3 grain boundaries (GBs), small-angle GBs (SAGBs), and general GBs at a silicon crystal/melt interface are studied by in situ observation during directional solidification. The interactions exhibit a dependence on the misorientation angle. SAGBs can propagate through Σ3 GBs, but this behavior transitions into coalescence with Σ3s when the misorientation approaches the limit of a SAGB, i.e. 15°. On the other hand, general GBs show the ability to terminate Σ3 GBs continuously. The present findings suggest that the presence of intrinsic dislocations in GBs plays a role in GB interactions.

KW - Directional solidification

KW - Grain boundary

KW - Multicrystalline Si

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DO - 10.1016/j.mtla.2019.100357

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SN - 2589-1529

VL - 7

JO - Materialia

JF - Materialia

M1 - 100357

ER -

Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon

Abstract

Keywords

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