Effect of oxygen flow rate on properties of aluminum-doped indium-saving indium tin oxide (Ito) thin films sputtered on preheated glass substrates

Svitlana Petrovska; Ruslan Sergiienko; Bogdan Ilkiv; Takashi Nakamura; Makoto Ohtsuka

doi:10.3390/met11101604

Effect of oxygen flow rate on properties of aluminum-doped indium-saving indium tin oxide (Ito) thin films sputtered on preheated glass substrates

Svitlana Petrovska, Ruslan Sergiienko, Bogdan Ilkiv, Takashi Nakamura, Makoto Ohtsuka

Center for Mineral Processing and Metallurgy (CMPM)

Research output: Contribution to journal › Article › peer-review

Abstract

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet– visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm²/V·s, carrier concentration of 2.9 × 10²⁰ cm⁻³ and transmittance of over 90% in the visible range.

Original language	English
Article number	1604
Journal	Metals
Volume	11
Issue number	10
DOIs	https://doi.org/10.3390/met11101604
Publication status	Published - 2021 Oct

Keywords

Aluminum-doped indium tin oxide
Amorphous thin film
Direct current sputtering
Electrical property
Optical property
Radio frequency sputtering

ASJC Scopus subject areas

Materials Science(all)
Metals and Alloys

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10.3390/met11101604

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title = "Effect of oxygen flow rate on properties of aluminum-doped indium-saving indium tin oxide (Ito) thin films sputtered on preheated glass substrates",

abstract = "Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet– visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.",

keywords = "Aluminum-doped indium tin oxide, Amorphous thin film, Direct current sputtering, Electrical property, Optical property, Radio frequency sputtering",

author = "Svitlana Petrovska and Ruslan Sergiienko and Bogdan Ilkiv and Takashi Nakamura and Makoto Ohtsuka",

note = "Funding Information: Funding: This research was funded by the New Energy and Industrial Technology Development Organization (NEDO), Japan. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

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doi = "10.3390/met11101604",

language = "English",

volume = "11",

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AU - Petrovska, Svitlana

AU - Sergiienko, Ruslan

AU - Ilkiv, Bogdan

AU - Nakamura, Takashi

AU - Ohtsuka, Makoto

N1 - Funding Information: Funding: This research was funded by the New Energy and Industrial Technology Development Organization (NEDO), Japan. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/10

Y1 - 2021/10

N2 - Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet– visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

AB - Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet– visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

KW - Aluminum-doped indium tin oxide

KW - Amorphous thin film

KW - Direct current sputtering

KW - Electrical property

KW - Optical property

KW - Radio frequency sputtering

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Effect of oxygen flow rate on properties of aluminum-doped indium-saving indium tin oxide (Ito) thin films sputtered on preheated glass substrates

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