TY - GEN
T1 - Effect of passivation film stress on shift in threshold voltage of GaAs FETs
AU - Miura, H.
AU - Ohshika, K.
AU - Masuda, H.
N1 - Publisher Copyright:
© 1996 IEEE.
PY - 1996
Y1 - 1996
N2 - GaAs FETs are widely used for high-speed and low-power devices, especially in optical communication systems. To improve product reliability, it is very important to control mechanical stress in device structures. This is because the stress field changes the dopant distribution and shifts electronic characteristic of devices due to piezoelectric effect. There are several stress development processes in the device manufacturing, such as thermal stress due to mismatch in thermal expansion coefficients among thin film materials used in the device structure and intrinsic stress which occurs during film deposition. To evaluate precise stress fields in actual device structures, the authors have developed stress simulation methods based on finite element analysis, a measurement method for mechanical properties of thin films, and a microscopic stress measurement method. To improve product reliability of silicon devices, it is confirmed that these methods are effective for control or optimization of mechanical stress fields in the device structure. In this paper, the stress evaluation methods are applied to discuss the effect of passivation film stress on the shift in threshold voltage of GaAs FETs.
AB - GaAs FETs are widely used for high-speed and low-power devices, especially in optical communication systems. To improve product reliability, it is very important to control mechanical stress in device structures. This is because the stress field changes the dopant distribution and shifts electronic characteristic of devices due to piezoelectric effect. There are several stress development processes in the device manufacturing, such as thermal stress due to mismatch in thermal expansion coefficients among thin film materials used in the device structure and intrinsic stress which occurs during film deposition. To evaluate precise stress fields in actual device structures, the authors have developed stress simulation methods based on finite element analysis, a measurement method for mechanical properties of thin films, and a microscopic stress measurement method. To improve product reliability of silicon devices, it is confirmed that these methods are effective for control or optimization of mechanical stress fields in the device structure. In this paper, the stress evaluation methods are applied to discuss the effect of passivation film stress on the shift in threshold voltage of GaAs FETs.
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U2 - 10.1109/SISPAD.1996.865268
DO - 10.1109/SISPAD.1996.865268
M3 - Conference contribution
AN - SCOPUS:25844453408
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 49
EP - 50
BT - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
Y2 - 2 September 1996 through 4 September 1996
ER -