Effect of preoxide on the structure of thermal oxide

Hiroshi Nohira, Kenji Saito, Kenichi Sakusabe, Koji Makihara, Mizuho Morita, Tadahiro Ohmi, Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    4 Citations (Scopus)


    It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    Number of pages4
    Publication statusPublished - 1995 Jan

    ASJC Scopus subject areas

    • Engineering(all)


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