Effect of preoxide on the structure of thermal oxide

Hiroshi Nohira; Kenji Saito; Kenichi Sakusabe; Koji Makihara; Mizuho Morita; Tadahiro Ohmi; Takeo Hattori

Effect of preoxide on the structure of thermal oxide

Hiroshi Nohira, Kenji Saito, Kenichi Sakusabe, Koji Makihara, Mizuho Morita, Tadahiro Ohmi, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Place of Publication	Minato-ku, Japan
Publisher	JJAP
Pages	245-248
Number of pages	4
Volume	34
Edition	1
Publication status	Published - 1995 Jan

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Effect of preoxide on the structure of thermal oxide",

abstract = "It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.",

author = "Hiroshi Nohira and Kenji Saito and Kenichi Sakusabe and Koji Makihara and Mizuho Morita and Tadahiro Ohmi and Takeo Hattori",

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T1 - Effect of preoxide on the structure of thermal oxide

AU - Nohira, Hiroshi

AU - Saito, Kenji

AU - Sakusabe, Kenichi

AU - Makihara, Koji

AU - Morita, Mizuho

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

PY - 1995/1

Y1 - 1995/1

N2 - It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.

AB - It is found from X-ray photoelectron spectroscopy study on the chemical structure of silicon dioxide, whose thickness is in the range of 1.2 nm to 8.6 nm, that the oxidation-induced chemical shift depends mainly on the distance, and that 0.4- and 0.6-nm-thick preoxide, which is formed in dry oxygen at 300 °C, modifies the structure of oxide near the surface.

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M3 - Chapter

AN - SCOPUS:0029185352

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BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

PB - JJAP

CY - Minato-ku, Japan

ER -

Effect of preoxide on the structure of thermal oxide

Abstract

ASJC Scopus subject areas

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