Abstract
Ferromagnetic MnAs thin films were grown on clean, S- and Se-passivated GaAs(1 0 0) substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs substrates depend on the surface treatment. On the clean and the Se-passivated surfaces MnAs films grow by a layer-by-layer mode, whereas on the S-passivated surface MnAs films grow by an island growth mode, and as a result polycrystalline films are obtained. Photoelectron spectroscopy study revealed that the Se overlayer on the Se-passivated GaAs substrates prevented Ga interdiffusion. We also found that the saturation magnetization of MnAs films on the Se-passivated surface was slightly larger than that on the clean and the S-passivated surfaces. This difference can be explained by the role of Se overlayer in preventing interdiffusion between MnAs and GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 561-565 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 209 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
| Event | The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn Duration: 1999 Jul 28 → 1999 Jul 30 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry