Effect of SAB process on GaN surfaces for low temperature bonding

Tsuguharu Wakamatsu, Tadatomo Suga, Masatake Akaike, Akitsu Shigetou, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the incident composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.

Original languageEnglish
Title of host publication6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings
Pages41-44
Number of pages4
DOIs
Publication statusPublished - 2007
EventPolytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics - Tokyo, Japan
Duration: 2007 Jan 152007 Jan 18

Publication series

Name6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings

Conference

ConferencePolytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics
Country/TerritoryJapan
CityTokyo
Period07/1/1507/1/18

Keywords

  • GaN
  • The surface active bonding (SAB) method

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