TY - GEN
T1 - Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor
AU - Sato, Soshi
AU - Hiroi, Y.
AU - Yamabe, K.
AU - Kitabatake, M.
AU - Endoh, T.
AU - Niwa, Masaaki
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/8/25
Y1 - 2015/8/25
N2 - An effect of the time constant of the measurement setup on a breakdown behavior of SiC MOS capacitors with aluminum gate electrode was investigated. For this experiment, an additional series resistance was inserted into the TDDB and TZDB measurement system. With respect to TDDB, SBD occurred more frequently when the additional series resistance was inserted. It is speculated that the joule heat generated at the moment of breakdown was not sufficient to form a low resistance conduction path between the gate electrode and substrate. With respect to TZDB, a sequential formation of separated groups of concaves was observed when the additional series resistance was inserted. It is speculated that the post-breakdown resistance was high enough to cause 'self-healing' as observed in the TDDB measurement. These results highlight the generation and dissipation of the heat at the time of the breakdown is one of the causes that determine HBD or SBD of SiC MOS capacitors.
AB - An effect of the time constant of the measurement setup on a breakdown behavior of SiC MOS capacitors with aluminum gate electrode was investigated. For this experiment, an additional series resistance was inserted into the TDDB and TZDB measurement system. With respect to TDDB, SBD occurred more frequently when the additional series resistance was inserted. It is speculated that the joule heat generated at the moment of breakdown was not sufficient to form a low resistance conduction path between the gate electrode and substrate. With respect to TZDB, a sequential formation of separated groups of concaves was observed when the additional series resistance was inserted. It is speculated that the post-breakdown resistance was high enough to cause 'self-healing' as observed in the TDDB measurement. These results highlight the generation and dissipation of the heat at the time of the breakdown is one of the causes that determine HBD or SBD of SiC MOS capacitors.
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U2 - 10.1109/IPFA.2015.7224336
DO - 10.1109/IPFA.2015.7224336
M3 - Conference contribution
AN - SCOPUS:84949815601
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 72
EP - 75
BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Y2 - 29 June 2015 through 2 July 2015
ER -