The carbide precipitation occurring during the tempering of lath martensite in Fe-0.6mass%C and Fe-0.6mass%C-(1, 2)mass%Si alloys was investigated by transmission electron microscopy, three dimensional atom probe (3DAP) and hardness measurements. At all tempering temperatures ranging from 523 to 923K, the Si addition results in a large resistance to softening. TEM observations revealed that the Si addition retards the transition from epsilon (ε) carbide to cementite (θ) during the tempering at 523K and 723K, and refines the θ dispersion during the tempering at 723K and 923K. Partitioning of Si atoms between θ and ferrite (α) was observed at 723K and 923K by 3DAP and EDS. It is concluded that the Si addition refines the 9 dispersion since the partitioning of Si controls the growth of 9.
|Number of pages||7|
|Publication status||Published - 2005 Jan 1|
|Event||International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2005 - Phoenix, AZ, United States|
Duration: 2005 May 29 → 2005 Jun 3
|Other||International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2005|
|Period||05/5/29 → 05/6/3|
ASJC Scopus subject areas