Effect of SiO2 fence on atomic step flow in chemical etching of Si surface

Daisuke Hojo; Norio Tokuda; Kikuo Yamabe

doi:10.1143/jjap.42.l561

Effect of SiO₂ fence on atomic step flow in chemical etching of Si surface

Daisuke Hojo, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO₂ fences was investigated. The SiO₂ fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO₂ fences stopped at the SiO₂ fences, while atomic step flow in the upside of the SiO₂ fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO₂ regions.

Original language	English
Pages (from-to)	L561-L563
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.42.l561
Publication status	Published - 2003 May 15
Externally published	Yes

Keywords

Anodic oxidation
Atomic force microscope (AFM)
Atomic step flow
Atomically flat surface
Step free
Step pattern controlling
Surface roughening
Wet etching

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.l561

Cite this

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title = "Effect of SiO2 fence on atomic step flow in chemical etching of Si surface",

abstract = "A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.",

keywords = "Anodic oxidation, Atomic force microscope (AFM), Atomic step flow, Atomically flat surface, Step free, Step pattern controlling, Surface roughening, Wet etching",

author = "Daisuke Hojo and Norio Tokuda and Kikuo Yamabe",

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language = "English",

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T1 - Effect of SiO2 fence on atomic step flow in chemical etching of Si surface

AU - Hojo, Daisuke

AU - Tokuda, Norio

AU - Yamabe, Kikuo

PY - 2003/5/15

Y1 - 2003/5/15

N2 - A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.

AB - A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.

KW - Anodic oxidation

KW - Atomic force microscope (AFM)

KW - Atomic step flow

KW - Atomically flat surface

KW - Step free

KW - Step pattern controlling

KW - Surface roughening

KW - Wet etching

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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