TY - JOUR
T1 - Effect of sputtering power on optoelectronic properties of iron-doped indium saving indium-tin oxide thin films
AU - Ohtsuka, M.
AU - Sergiienko, R.
AU - Petrovska, Svitlana Stepanivna
AU - Ilkiv, B.
AU - Nakamura, T.
N1 - Funding Information:
The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan.
Publisher Copyright:
© 2019 G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine.
PY - 2019
Y1 - 2019
N2 - Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indi-um oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe2O3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet– Visible–Infrared (UV–Vis–IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 µΩ⋅cm and trans-mittance over 85% are obtained for thin films sputtered under optimum con-ditions. Iron doping results in significant improvement in films transmit-tance and increasing the crystallization temperature of ITO thin films.
AB - Iron-doped indium-tin oxide (ITO) thin films with reduced to 50% mass indi-um oxide content are deposited onto glass substrates preheated at 523 K by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere. The influence of different radio frequency (RF) plasma power for deposition of Fe2O3 target on the electrical, optical, structural, and morphological properties of the films is investigated by means of four point probe, Ultraviolet– Visible–Infrared (UV–Vis–IR) spectroscopy, X-ray diffraction and atomic force microscopy methods. The volume resistivity of 930 µΩ⋅cm and trans-mittance over 85% are obtained for thin films sputtered under optimum con-ditions. Iron doping results in significant improvement in films transmit-tance and increasing the crystallization temperature of ITO thin films.
KW - Electrical properties
KW - Iron-doped indium-tin oxide
KW - Magnetron direct current sputtering
KW - Optical properties
KW - Radio frequency deposition
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U2 - 10.15407/mfint.41.07.0941
DO - 10.15407/mfint.41.07.0941
M3 - Article
AN - SCOPUS:85083063177
SN - 1024-1809
VL - 41
SP - 941
EP - 952
JO - Metallofizika i Noveishie Tekhnologii
JF - Metallofizika i Noveishie Tekhnologii
IS - 7
ER -