Abstract
The effect of strain on alloying in semiconductor heterostructures is investigated by calculating the solution energy as a function of strain. The expression for the solution energy as a function of strain is obtained by expanding the homogeneous alloy energy in terms of composition and strain. An electronic structure calculation method is applied to calculate the material specific parameters for In-Ga-As system. The results are in good agreement with the results of a thermodynamic assessment. Strain in the InAs/GaAs heterostructure and the solution energy are computed as functions of the in-plane strain. The result shows that when the structure is under a large strain, dissolution can reduce the energy of the system.
| Original language | English |
|---|---|
| Pages (from-to) | 2536-2541 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 41 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2002 Apr |
Keywords
- Alloy phase diagram
- Electronic structure calculation
- Heterostructure
- InAs/GaAs
- Solution energy
- Strain