Effect of structure on transport characteristics of ballistic one-dimensional channel

Yoshiro Hirayama, Tadashi Saku, Yoshiji Horikoshi

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Ballistic one-dimensional (1-D) channels are fabricated by focused Ga ion beam scanning ontwo different modulation-doped wafers. Higher electron density causes a smaller transition region length between the 1-d channel and two-dimensional (2-D) ohmic regions. A ballistic 1-D channel witha smaller transition region shows conductance oscillation in addition to quantized step structures.This oscillation is explained by the interference of electron waves reflected at both ends of the 1-D channel. On the other hand, a ballistic channel with a larger transition region shows quantized step structures without conductance oscillation.

Original languageEnglish
Pages (from-to)L701-L703
JournalJapanese Journal of Applied Physics
Issue number4 A
Publication statusPublished - 1989 Apr


  • Ballistic transport
  • Depletion width
  • Focused ion beam
  • One-dimensional channel
  • Quantum point contact


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