Abstract
Ballistic one-dimensional (1-D) channels are fabricated by focused Ga ion beam scanning ontwo different modulation-doped wafers. Higher electron density causes a smaller transition region length between the 1-d channel and two-dimensional (2-D) ohmic regions. A ballistic 1-D channel witha smaller transition region shows conductance oscillation in addition to quantized step structures.This oscillation is explained by the interference of electron waves reflected at both ends of the 1-D channel. On the other hand, a ballistic channel with a larger transition region shows quantized step structures without conductance oscillation.
| Original language | English |
|---|---|
| Pages (from-to) | L701-L703 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 28 |
| Issue number | 4 A |
| DOIs | |
| Publication status | Published - 1989 Apr |
Keywords
- Ballistic transport
- Depletion width
- Focused ion beam
- One-dimensional channel
- Quantum point contact