Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Takeo Ohno; Yutaka Oyama; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/j.mssp.2003.08.015

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH₃ and TEG in an ultra-high vacuum

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p ⁺-GaAs layers were grown on (001)-oriented GaAs substrates by intermittent supply of AsH₃ and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)₂ was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH₃ and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.

Original language	English
Pages (from-to)	421-424
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.08.015
Publication status	Published - 2003 Oct

Keywords

Be-doping
GaAs
Molecular layer epitaxy
Surface reaction
Surface stoichiometry

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2003.08.015

Cite this

@article{6d11888d1d984c879852b45a2e3d2cd1,

title = "Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum",

abstract = "The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p +-GaAs layers were grown on (001)-oriented GaAs substrates by intermittent supply of AsH3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.",

keywords = "Be-doping, GaAs, Molecular layer epitaxy, Surface reaction, Surface stoichiometry",

author = "Takeo Ohno and Yutaka Oyama and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

month = oct,

doi = "10.1016/j.mssp.2003.08.015",

language = "English",

volume = "6",

pages = "421--424",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/10

Y1 - 2003/10

N2 - The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p +-GaAs layers were grown on (001)-oriented GaAs substrates by intermittent supply of AsH3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.

AB - The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p +-GaAs layers were grown on (001)-oriented GaAs substrates by intermittent supply of AsH3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp)2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.

KW - Be-doping

KW - GaAs

KW - Molecular layer epitaxy

KW - Surface reaction

KW - Surface stoichiometry

UR - http://www.scopus.com/inward/record.url?scp=1642602991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642602991&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.08.015

DO - 10.1016/j.mssp.2003.08.015

M3 - Article

AN - SCOPUS:1642602991

SN - 1369-8001

VL - 6

SP - 421

EP - 424

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -