Effect of temperature on Raman scattering in hexagonal ZnMgO for optoelectronic applications

J. F. Kong; W. Z. Shen; Y. W. Zhang; X. M. Li; Q. X. Guo

doi:10.1016/j.ssc.2008.10.024

Effect of temperature on Raman scattering in hexagonal ZnMgO for optoelectronic applications

J. F. Kong, W. Z. Shen, Y. W. Zhang, X. M. Li, Q. X. Guo

Creative Interdisciplinary Research Division

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15 Citations (Scopus)

Abstract

We have carried out a detailed investigation of temperature-dependent micro-Raman scattering on hexagonal ZnMgO films with different Mg compositions (0-0.323). The phonon frequencies downshift and linewidths broadening of A₁ [longitudinal optical (LO)] and E₁(LO) modes can be well explained by a model involving the contributions of thermal expansion, lattice-mismatch-induced strain, and anharmonic phonon processes. We have elucidated the variation with Mg composition of the contribution of the three- and four-phonon processes in the anharmonic effect. The present work establishes an experimental base for the micro-Raman technique to monitor the local temperature during the ZnMgO-based device operation with a submicrometer spatial resolution.

Original language	English
Pages (from-to)	10-13
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2008.10.024
Publication status	Published - 2009 Jan 1

Keywords

A. Thin films
C. Impurities in semiconductors
D. Anharmonicity
D. Phonons

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2008.10.024

Cite this

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title = "Effect of temperature on Raman scattering in hexagonal ZnMgO for optoelectronic applications",

abstract = "We have carried out a detailed investigation of temperature-dependent micro-Raman scattering on hexagonal ZnMgO films with different Mg compositions (0-0.323). The phonon frequencies downshift and linewidths broadening of A1 [longitudinal optical (LO)] and E1(LO) modes can be well explained by a model involving the contributions of thermal expansion, lattice-mismatch-induced strain, and anharmonic phonon processes. We have elucidated the variation with Mg composition of the contribution of the three- and four-phonon processes in the anharmonic effect. The present work establishes an experimental base for the micro-Raman technique to monitor the local temperature during the ZnMgO-based device operation with a submicrometer spatial resolution.",

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AU - Kong, J. F.

AU - Shen, W. Z.

AU - Zhang, Y. W.

AU - Li, X. M.

AU - Guo, Q. X.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We have carried out a detailed investigation of temperature-dependent micro-Raman scattering on hexagonal ZnMgO films with different Mg compositions (0-0.323). The phonon frequencies downshift and linewidths broadening of A1 [longitudinal optical (LO)] and E1(LO) modes can be well explained by a model involving the contributions of thermal expansion, lattice-mismatch-induced strain, and anharmonic phonon processes. We have elucidated the variation with Mg composition of the contribution of the three- and four-phonon processes in the anharmonic effect. The present work establishes an experimental base for the micro-Raman technique to monitor the local temperature during the ZnMgO-based device operation with a submicrometer spatial resolution.

AB - We have carried out a detailed investigation of temperature-dependent micro-Raman scattering on hexagonal ZnMgO films with different Mg compositions (0-0.323). The phonon frequencies downshift and linewidths broadening of A1 [longitudinal optical (LO)] and E1(LO) modes can be well explained by a model involving the contributions of thermal expansion, lattice-mismatch-induced strain, and anharmonic phonon processes. We have elucidated the variation with Mg composition of the contribution of the three- and four-phonon processes in the anharmonic effect. The present work establishes an experimental base for the micro-Raman technique to monitor the local temperature during the ZnMgO-based device operation with a submicrometer spatial resolution.

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KW - C. Impurities in semiconductors

KW - D. Anharmonicity

KW - D. Phonons

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Effect of temperature on Raman scattering in hexagonal ZnMgO for optoelectronic applications

Abstract

Keywords

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