TY - GEN
T1 - Effect of the crystallinity on the long-term reliability of electroplated copper thin-film interconnections
AU - Kato, Takeru
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014
Y1 - 2014
N2 - In this study, the crystallinity of electroplated copper thin-film interconnections on Cu and Ru seed layers before and after EM (Electro migration) test was evaluated by an EBSD (Electron Back-scattered Diffraction). The EM resistance of the interconnection on the Ru seed layer was improved drastically compared with that on the Cu one. EBSD analyses revealed that the crystallinity of the interconnection on the Ru seed layer was much higher than that on the Cu one. In particular, the density of random grain boundaries with low crystallinity decreased in the interconnection on the Ru seed layer. It was concluded, therefore, that the improvement of the crystallinity of the electroplated copper thin-film interconnection by using the seed layer that can reduce the lattice mismatch between Cu and a barrier layer material is effective for assuring the high EM resistance and thus, the long-term reliability of the interconnection.
AB - In this study, the crystallinity of electroplated copper thin-film interconnections on Cu and Ru seed layers before and after EM (Electro migration) test was evaluated by an EBSD (Electron Back-scattered Diffraction). The EM resistance of the interconnection on the Ru seed layer was improved drastically compared with that on the Cu one. EBSD analyses revealed that the crystallinity of the interconnection on the Ru seed layer was much higher than that on the Cu one. In particular, the density of random grain boundaries with low crystallinity decreased in the interconnection on the Ru seed layer. It was concluded, therefore, that the improvement of the crystallinity of the electroplated copper thin-film interconnection by using the seed layer that can reduce the lattice mismatch between Cu and a barrier layer material is effective for assuring the high EM resistance and thus, the long-term reliability of the interconnection.
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U2 - 10.1109/IMPACT.2014.7048347
DO - 10.1109/IMPACT.2014.7048347
M3 - Conference contribution
AN - SCOPUS:84925879439
T3 - 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference: Challenges of Change - Shaping the Future, IMPACT 2014 - Proceedings
SP - 359
EP - 362
BT - 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2014
Y2 - 22 October 2014 through 24 October 2014
ER -