Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

Chuanhong Fan; Ryosuke Furuya; Osamu Asai; Ken Suzuki; Hideo Miura

doi:10.1115/IPACK2013-73147

Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

Chuanhong Fan, Ryosuke Furuya, Osamu Asai, Ken Suzuki, Hideo Miura

ENG - Fracture and Reliability Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

Original language	English
Title of host publication	ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013
DOIs	https://doi.org/10.1115/IPACK2013-73147
Publication status	Published - 2013 Dec 1
Event	ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013 - Burlingame, CA, United States Duration: 2013 Jul 16 → 2013 Jul 18

Publication series

Name	ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013
Volume	1

Other

Other	ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013
Country/Territory	United States
City	Burlingame, CA
Period	13/7/16 → 13/7/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Networks and Communications
Computer Science Applications
Hardware and Architecture
Information Systems
Electronic, Optical and Magnetic Materials

Access to Document

10.1115/IPACK2013-73147

Cite this

Fan, C., Furuya, R., Asai, O., Suzuki, K., & Miura, H. (2013). Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013 (ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013; Vol. 1). https://doi.org/10.1115/IPACK2013-73147

Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. / Fan, Chuanhong; Furuya, Ryosuke; Asai, Osamu et al.
ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013. 2013. (ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, C, Furuya, R, Asai, O, Suzuki, K & Miura, H 2013, Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. in ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013. ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013, vol. 1, ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013, Burlingame, CA, United States, 13/7/16. https://doi.org/10.1115/IPACK2013-73147

Fan C, Furuya R, Asai O, Suzuki K , Miura H. Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013. 2013. (ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013). doi: 10.1115/IPACK2013-73147

Fan, Chuanhong ; Furuya, Ryosuke ; Asai, Osamu et al. / Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection. ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013. 2013. (ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013).

@inproceedings{ce94f56553e04929877d70afc27520a1,

title = "Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection",

abstract = "In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.",

author = "Chuanhong Fan and Ryosuke Furuya and Osamu Asai and Ken Suzuki and Hideo Miura",

year = "2013",

month = dec,

day = "1",

doi = "10.1115/IPACK2013-73147",

language = "English",

isbn = "9780791855751",

series = "ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013",

booktitle = "ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013",

note = "ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013 ; Conference date: 16-07-2013 Through 18-07-2013",

}

TY - GEN

T1 - Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

AU - Fan, Chuanhong

AU - Furuya, Ryosuke

AU - Asai, Osamu

AU - Suzuki, Ken

AU - Miura, Hideo

PY - 2013/12/1

Y1 - 2013/12/1

N2 - In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

AB - In the present study, a new material, ruthenium whose lattice mismatch against copper is about 6%, was used as the seed layer of electroplated copper thin-film interconnections for semiconductor devices. The crystallinity of the copper thin-film interconnections was evaluated through an EBSD (Electron Back-scattered Diffraction) method and it is found that the crystallinity of them is improved drastically compared with those electroplated on the copper seed. The resistance and electro migration (EM) tolerance of the copper interconnections are also improved a lot compared with the interconnections electroplated on copper seed. Based on these results, a new guideline to design highly reliable electroplated copper thin-film interconnection has been established.

UR - http://www.scopus.com/inward/record.url?scp=84894641192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894641192&partnerID=8YFLogxK

U2 - 10.1115/IPACK2013-73147

DO - 10.1115/IPACK2013-73147

M3 - Conference contribution

AN - SCOPUS:84894641192

SN - 9780791855751

T3 - ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013

BT - ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013

T2 - ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2013

Y2 - 16 July 2013 through 18 July 2013

ER -

Effect of the lattice mismatch between copper thin-film interconnection and base material on the crystallinity of the interconnection

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