Effect of tin addition on mesoporous silica thin film and its application for surface photovoltage NO2 gas sensor

Brian Yuliarto; Hao Shen Zhou; Takeo Yamada; Itaru Honma; Yosuke Katsumura; Masaki Ichihara

doi:10.1021/ac0495642

Effect of tin addition on mesoporous silica thin film and its application for surface photovoltage NO₂ gas sensor

Brian Yuliarto, Hao Shen Zhou, Takeo Yamada, Itaru Honma, Yosuke Katsumura, Masaki Ichihara

IMRAM - Center for Mineral Processing and Metallurgy (CMPM)

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Self-ordered and structure-controlled transparent films of tin-modified mesoporous silica (Sn/Si ratio of 0.5-3%) were first prepared using a molecule surfactant template method employing spin coating. A surface photovoltage (SPV) NO₂ gas sensor was then fabricated using these self-ordered tin-modified mesoporous silica thin films based on a metal-insulator- semiconductor structure. Highly sensitive tin-modified mesoporous silica was obtained that could detect NO₂ gas concentrations of as low as 300 ppb at room temperature. The detection mechanism for NO₂ is believed to involve both the surface area, which contributes to the change in dielectric constant, and the amount of tin incorporated, which contributes to the change in charge. It was found that, in this SPV sensor, the optimal Sn/Si ratio of 0.5% delivered record-high sensing performance.

Original language	English
Pages (from-to)	6719-6726
Number of pages	8
Journal	Analytical Chemistry
Volume	76
Issue number	22
DOIs	https://doi.org/10.1021/ac0495642
Publication status	Published - 2004 Nov 15

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abstract = "Self-ordered and structure-controlled transparent films of tin-modified mesoporous silica (Sn/Si ratio of 0.5-3%) were first prepared using a molecule surfactant template method employing spin coating. A surface photovoltage (SPV) NO2 gas sensor was then fabricated using these self-ordered tin-modified mesoporous silica thin films based on a metal-insulator- semiconductor structure. Highly sensitive tin-modified mesoporous silica was obtained that could detect NO2 gas concentrations of as low as 300 ppb at room temperature. The detection mechanism for NO2 is believed to involve both the surface area, which contributes to the change in dielectric constant, and the amount of tin incorporated, which contributes to the change in charge. It was found that, in this SPV sensor, the optimal Sn/Si ratio of 0.5% delivered record-high sensing performance.",

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AU - Yuliarto, Brian

AU - Zhou, Hao Shen

AU - Yamada, Takeo

AU - Honma, Itaru

AU - Katsumura, Yosuke

AU - Ichihara, Masaki

PY - 2004/11/15

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Effect of tin addition on mesoporous silica thin film and its application for surface photovoltage NO₂ gas sensor

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