Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

M. Suzuno; Y. Ugajin; S. Murase; T. Suemasu; M. Uchikoshi; M. Isshiki

doi:10.1063/1.2816230

Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

M. Suzuno, Y. Ugajin, S. Murase, T. Suemasu, M. Uchikoshi, M. Isshiki

IMRAM - Collaborative Research Division of Non-ferrousMetallurgy and Environmental Science

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Intentionally undoped p -type Β -FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of Β -FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the Β -FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.

Original language	English
Article number	103706
Journal	Journal of Applied Physics
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.2816230
Publication status	Published - 2007

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10.1063/1.2816230

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title = "Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy",

abstract = "Intentionally undoped p -type Β -FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of Β -FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the Β -FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.",

author = "M. Suzuno and Y. Ugajin and S. Murase and T. Suemasu and M. Uchikoshi and M. Isshiki",

note = "Funding Information: We would like to thank Dr. T. Wakayama and Dr. H. Akinaga for their help in the Nanoprocessing Partnership Program at AIST, Tsukuba. This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan and the Industrial Technology Research Grant Program from the New Energy and Industrial Technology Development Organization (NEDO) of Japan.",

year = "2007",

doi = "10.1063/1.2816230",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

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T1 - Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

AU - Suzuno, M.

AU - Ugajin, Y.

AU - Murase, S.

AU - Suemasu, T.

AU - Uchikoshi, M.

AU - Isshiki, M.

N1 - Funding Information: We would like to thank Dr. T. Wakayama and Dr. H. Akinaga for their help in the Nanoprocessing Partnership Program at AIST, Tsukuba. This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan and the Industrial Technology Research Grant Program from the New Energy and Industrial Technology Development Organization (NEDO) of Japan.

PY - 2007

Y1 - 2007

N2 - Intentionally undoped p -type Β -FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of Β -FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the Β -FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.

AB - Intentionally undoped p -type Β -FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of Β -FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the Β -FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.

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JF - Journal of Applied Physics

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Effect of using a high-purity Fe source on the transport properties of p -type Β -FeSi2 grown by molecular-beam epitaxy

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