Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors

Dong Guo; Shiro Entani; Susumu Ikeda; Koichiro Saiki

doi:10.1016/j.cplett.2006.08.009

Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors

Dong Guo, Shiro Entani, Susumu Ikeda, Koichiro Saiki

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The effect of UV/ozone treatment of the SiO₂ dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. The effect of UV/ozone treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO₂ interface and the increased grain size.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Chemical Physics Letters
Volume	429
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2006.08.009
Publication status	Published - 2006 Sept 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2006.08.009

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title = "Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors",

abstract = "The effect of UV/ozone treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. The effect of UV/ozone treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.",

author = "Dong Guo and Shiro Entani and Susumu Ikeda and Koichiro Saiki",

note = "Funding Information: This research was supported by a Grant-in-Aid for Scientific research from MEXT of Japan (14GS0207).",

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doi = "10.1016/j.cplett.2006.08.009",

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AU - Guo, Dong

AU - Entani, Shiro

AU - Ikeda, Susumu

AU - Saiki, Koichiro

N1 - Funding Information: This research was supported by a Grant-in-Aid for Scientific research from MEXT of Japan (14GS0207).

PY - 2006/9/29

Y1 - 2006/9/29

N2 - The effect of UV/ozone treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. The effect of UV/ozone treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.

AB - The effect of UV/ozone treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. The effect of UV/ozone treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.

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JO - Chemical Physics Letters

JF - Chemical Physics Letters

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Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors

Abstract

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