## Abstract

The emission mechanisms of strained In_{x}Ga_{1-x}N quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, F_{PZ}, and L exceed the valence band discontinuity, ΔE_{V}. In this case, holes are confined in the triangular potential well formed at one side of the well producing the apparent Stokes-like shift. Under the condition that F_{PZ}×L exceeds the conduction band discontinuity ΔE_{C}, the electron-hole pair is confined at opposite sides of the well. The QCFK further modulated the emission energy for the wells with L greater than the three dimensional free exciton Bohr radius a_{B}. On the other hand, effective in-plane localization of carriers in quantum disk size potential minima, which are produced by nonrandom alloy compositional fluctuation enhanced by the large bowing parameter and F_{PZ}, produces a confined electron-hole pair whose wave functions are still overlapped (quantized excitons) provided that L<a_{B}.

Original language | English |
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Pages (from-to) | 2006-2008 |

Number of pages | 3 |

Journal | Applied Physics Letters |

Volume | 73 |

Issue number | 14 |

DOIs | |

Publication status | Published - 1998 |