We analyzed the bias-voltage dependence of the 1/f-like drain-noise current of highly biased InGaAs-based lattice-matched HEMTs and evaluated the effective length of the high-field region at the drain edge of the device. We found that the effective length was between the nominal barrier thickness and the estimated lateral extension of side-etched region, and that the effective length increased when the gate bias voltage was decreased. This work is likely to provide a semi-quantitative method for determining experimentally the effective length of the high-field region of these HEMTs.
|Number of pages
|Published - 2000
|27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: 2000 Oct 2 → 2000 Oct 5
|27th International Symposium on Compound Semiconductors
|00/10/2 → 00/10/5