The process of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPV) was investigated using Ru cap layer insertion. At high critical current density, the ESPVs depicted CIMS behavior under sweeping dc current. The reduced critical current densities for CIMS were observed on insertion of Ru layer between free layer and top electrode. An increase in thickness of free layer also exhibited CIMS behavior. The decrease in current density with insertion of Ru cap layers in ESPVs were also used in current-controlled magnetic storage and sensing devices.