TY - JOUR
T1 - Effects of annealing temperature on sensing properties of magnetic-tunnel-junction-based sensors with perpendicular synthetic antiferromagnetic Co/Pt pinned layer
AU - Ogasawara, Takahiro
AU - Oogane, Mikihiko
AU - Tsunoda, Masakiyo
AU - Ando, Yasuo
N1 - Funding Information:
Acknowledgments This work was partly supported by DENSO Corporation, Center for Science and Innovation in Spintronics (CSIS), the Center for Innovative Integrated Electronic Systems (CIES), and the Center for Spintronics Research Network (CSRN).
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/11
Y1 - 2018/11
N2 - We studied the effects of annealing temperature on the sensing properties of linear-output magnetic sensor devices fabricated using a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) Co/Pt pinned layer. Owing to the large exchange coupling of the p-SAF Co/Pt pinned layer, linear tunnel magnetoresistance (TMR) curves were observed within a wide range of over ±3 kOe. In terms of sensing properties, the MTJ after annealing at 300 °C showed the highest sensitivity of 0.033%/Oe owing to the large TMR ratio of 164%. Moreover, the achieved nonlinearity of 0.061% full scale (FS) is quite low, which is comparable to that of commercialized Hall sensors.
AB - We studied the effects of annealing temperature on the sensing properties of linear-output magnetic sensor devices fabricated using a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) Co/Pt pinned layer. Owing to the large exchange coupling of the p-SAF Co/Pt pinned layer, linear tunnel magnetoresistance (TMR) curves were observed within a wide range of over ±3 kOe. In terms of sensing properties, the MTJ after annealing at 300 °C showed the highest sensitivity of 0.033%/Oe owing to the large TMR ratio of 164%. Moreover, the achieved nonlinearity of 0.061% full scale (FS) is quite low, which is comparable to that of commercialized Hall sensors.
UR - http://www.scopus.com/inward/record.url?scp=85055826638&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055826638&partnerID=8YFLogxK
U2 - 10.7567/JJAP.57.110308
DO - 10.7567/JJAP.57.110308
M3 - Article
AN - SCOPUS:85055826638
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11
M1 - 110308
ER -