Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Takeo Ohno; Yutaka Oyama; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/j.mssp.2003.08.014

Effects of AsH₃ surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000A/cm². It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH₃ surface treatment conditions just prior to regrowth. The effects of AsH₃ surface treatment are discussed in view of the control of surface stoichiometry.

Original language	English
Pages (from-to)	417-420
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.08.014
Publication status	Published - 2003 Oct

Keywords

Area-selective epitaxy
GaAs
Regrowth
Semiconductor interfaces
Sidewall
Tunnel junction

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2003.08.014

Cite this

@article{5ee147d175754884a32facdd0679f6ce,

title = "Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction",

abstract = "Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000A/cm2. It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH3 surface treatment conditions just prior to regrowth. The effects of AsH3 surface treatment are discussed in view of the control of surface stoichiometry.",

keywords = "Area-selective epitaxy, GaAs, Regrowth, Semiconductor interfaces, Sidewall, Tunnel junction",

author = "Takeo Ohno and Yutaka Oyama and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

month = oct,

doi = "10.1016/j.mssp.2003.08.014",

language = "English",

volume = "6",

pages = "417--420",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

AU - Ohno, Takeo

AU - Oyama, Yutaka

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/10

Y1 - 2003/10

N2 - Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000A/cm2. It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH3 surface treatment conditions just prior to regrowth. The effects of AsH3 surface treatment are discussed in view of the control of surface stoichiometry.

AB - Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000A/cm2. It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH3 surface treatment conditions just prior to regrowth. The effects of AsH3 surface treatment are discussed in view of the control of surface stoichiometry.

KW - Area-selective epitaxy

KW - GaAs

KW - Regrowth

KW - Semiconductor interfaces

KW - Sidewall

KW - Tunnel junction

UR - http://www.scopus.com/inward/record.url?scp=1642587271&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642587271&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.08.014

DO - 10.1016/j.mssp.2003.08.014

M3 - Article

AN - SCOPUS:1642587271

SN - 1369-8001

VL - 6

SP - 417

EP - 420

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -